2SB903

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SD1212 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. ·High-speed switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SB903 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -60 -30 -6 -12 -20 1.75 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB903 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ; IE=0 IC=-1mA ;RBE=; IE=-1mA ; IC=0 IC=-5A, IB=-0.25A VCB=-40V;IE=0 VEB=-4V;IC=0 IC=-1A ; VCE=-2V IC=-6A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 120 MHz MIN -60 -30 -6 -0.5 -0.1 -0.1 280 TYP MAX UNIT V V V V mA mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5A ;IB1=-IB2=-0.5A; VCC=-10V;RL=2B 0.10 0.30 0.03 µs µs µs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB903 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB903 4