2SB904

2SB904

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB904 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB904 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB904 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -30 -6 -20 -30 60 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=: IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-8A; IB=-0.4A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-10A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -30 -60 -6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SB904 TYP. MAX UNIT V V V -0.25 -0.5 -0.1 -0.1 280 V mA mA 120 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-10A ;IB1=-IB2=-0.5A VCC=-10V;RL=1C 0.3 0.3 0.02 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB904 Fig.2 outline dimensions 3
2SB904
物料型号: - 型号:2SB904

器件简介: - 2SB904是一种硅PNP大功率晶体管,采用TO-3PN封装,与2SD1213型号互补,具有低集电极饱和电压和大电流容量。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极,连接到安装底(Collector; connected to mounting base) - 3号引脚:发射极(Emitter)

参数特性: - 集电极-基极电压(VCBO):-60V,开发射极 - 集电极-发射极电压(VCEO):-30V,开基极 - 发射极-基极电压(VEBO):-6V,开集电极 - 集电极电流(Ic):-20A - 集电极峰值电流(IcM):-30A - 集电极功耗(Pc):60W,Tc=25°C - 结温(Tj):150°C - 存储温度(Tstg):-55~150°C

功能详解: - 2SB904的主要特性包括集电极-发射极击穿电压、集电极-基极击穿电压、发射极-基极击穿电压、集电极-发射极饱和电压、集电极截止电流、发射极截止电流、直流电流增益等。 - 直流电流增益在IC=-1A和VCE=-2V时为70至280,IC=-10A和VCE=-2V时为30。 - 过渡频率(fT)在IC=-1A和VCE=-5V时为120MHz。 - 开启时间(ton)、存储时间(tstg)和下降时间(tf)分别为0.3µs、0.3µs和0.02µs。

应用信息: - 2SB904适用于大电流继电器驱动、高速逆变器、转换器等场合。

封装信息: - 封装形式为TO-3PN,具体尺寸见图2。
2SB904 价格&库存

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