2SB922

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB922 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1238 ·Wide area of safe operation ·Low collector saturation voltage : VCE(sat) =–0.5V max. APPLICATIONS ·Suitable for relay drivers,high-speed Inverters, converters,and other largecurrent switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -12 -20 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB922 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=> IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A ,IB=-0.6A VCB=-80V, IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-6A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 20 MHz MIN -120 -120 -6 -0.5 -0.1 -0.1 280 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5.0A; IB1=-IB2=-0.5A VCC=50V;RL=10F 0.2 0.7 0.1 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB922 Fig.2 outline dimensions 3