2SB966

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB966 · DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1289 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -12 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB966 SYMBOL MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE -1 hFE -2 COB fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V -120 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -50 µA Emitter cut-off current -50 µA DC current gain 60 320 DC current gain 20 Output capacitance 200 pF Transition frequency 65 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB966 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3