2SB974

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB974 DESCRIPTION ·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 30 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB974 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-5mA ;IC=0 IC=-2A; IB=-2mA IC=-2A; IB=-2mA VCB=-100V; IE=0 VCE=-50V; IB=0 VEB=-5V; IC=0 IC=-2A ; VCE=-2V 2000 MIN -100 -100 -5 -1.5 -2.0 -1 -100 -5.0 20000 TYP. MAX UNIT V V V V V µA µA mA SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB974 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3