2SB995

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB995 DESCRIPTION ·With TO-220C package ·High current capacity ·Low collector saturation voltage APPLICATIONS ·For audio frequency amplifier output stage applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -6 -5 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-3A;IB=-0.3 A IC=-3A;IB=-0.3 A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V 40 20 5 MIN -100 -100 -6 2SB995 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V -1.0 -1.5 -0.1 -0.1 240 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB995 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3