2SB995

2SB995

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB995 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB995 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB995 DESCRIPTION ·With TO-220C package ·High current capacity ·Low collector saturation voltage APPLICATIONS ·For audio frequency amplifier output stage applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -6 -5 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-3A;IB=-0.3 A IC=-3A;IB=-0.3 A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V 40 20 5 MIN -100 -100 -6 2SB995 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V -1.0 -1.5 -0.1 -0.1 240 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB995 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
2SB995
1. 物料型号:2SB995,由SavantIC Semiconductor生产。

2. 器件简介: - 该晶体管采用TO-220C封装。 - 具有高电流容量和低集电极饱和电压。

3. 引脚分配: - 1号引脚:发射极(Emitter) - 2号引脚:集电极,连接到安装底座(Collector;connected to mounting base) - 3号引脚:基极(Base)

4. 参数特性: - 集电极-基极电压(VCBO):-100V - 集电极-发射极电压(VCEO):-100V - 发射极-基极电压(VEBO):-6V - 集电极电流(Ic):-5A - 集电极功耗(Pc):40W(在Tc=25°C时) - 结温(Tj):150°C - 存储温度(Tstg):-55°C至150°C

5. 功能详解: - 该晶体管的主要特性包括集电极-发射极击穿电压、集电极-基极击穿电压、发射极-基极击穿电压、集电极-发射极饱和电压、基极-发射极饱和电压、集电极截止电流、发射极截止电流、直流电流增益(hFE)和转换频率(fr)。

6. 应用信息: - 适用于音频频率放大器输出级应用。

7. 封装信息: - 提供了TO-220C封装的外形尺寸图,未标明的公差为±0.10mm。
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