2SC1046

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1046 DESCRIPTION ·W ith TO-3 package ·High breakdown voltage APPLICATIONS ·For CRT horizontal output applications PINNING(see fig.2) PI N 1 2 3 Ba s e Em i t t e r Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 1000 400 6 3 25 125 -40~125 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M IN 2SC1046 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.4A 2 .0 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V;IC=0 10 µA hF E DC current gain IC=2 A ; VCE=5V 4 20 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1046 Fig.2 Outline dimensions 3