2SC1080

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·W ith TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PI N 1 2 3 Ba s e Em i t t e r Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER 2SC1079 VCBO Collector-base voltage 2SC1080 2SC1079 VCEO Collector-emitter voltage 2SC1080 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25? Open collector Open base 100 5 12 -1 2 100 150 -65~150 V A A W ? ? Open emitter 100 120 V CONDITIONS VALUE 120 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER 2SC1079 V(BR)CEO Collector-emitter breakdown voltage 2SC1080 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IE=10mA ;IC=0 IC=10A; IB=1A IC=10A ; VCE=5V VCB=50V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=7A ; VCE=5V IC=2A ; VCE=5V IC=0.1A ;IB=0 CONDITIONS 2SC1079 2SC1080 M IN 120 TYP. MAX UNIT V 100 5 3 .0 2 .5 0 .1 0 .1 40 15 4 MHz 140 V V V mA mA u hFE-1 Classifications R 40-80 Y 70-140 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1079 2SC1080 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3