2SC1108

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1108 DESCRIPTION ·W ith TO-220C package ·High breakdown voltage :VCEO=100V ·High current :4A APPLICATIONS ·For power amplifier applications PINNING PI N 1 2 3 Ba s e Collector;connected to mounting base Em i t t e r DESCRIPTION Absolute maximum ratings(Tc=25? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 4 40 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hF E fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IE=1mA; IC=0 IC=3A;IB=0.3 A IC=3A;IB=0.3 A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 25 100 M IN 100 5 2SC1108 TYP. MAX UNIT V V 1 .5 2 .0 0 .1 0 .1 320 10 V V mA mA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1108 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3