2SC1140

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1140 DESCRIPTION ·W ith TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PI N 1 2 3 Ba s e Em i t t e r Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb=25? Open emitter Open base Open collector CONDITIONS MAX 800 400 7 15 150 200 -65~200 UNIT V V V A W ? ? THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1 .0 UNIT ? /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IE=1mA ; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=7.5A ; VCE=5V IC=1A ; VCE=5V 15 10 M IN 400 7 2SC1140 TYP. MAX UNIT V V 1 .5 1 .6 0 .1 0 .1 50 25 10 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1140 Fig.2 Outline dimensions 3