2SC1163

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION ·W ith TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PI N 1 2 3 Em i t t e r Collector;connected to mounting base Ba s e DESCRIPTION Absolute Maximun Ratings (Ta=25? ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 300 300 4 0 .1 2 0 .8 150 -65~150 UNIT V V V A W ? ? THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 6 .2 5 UNIT ? /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M IN 2SC1163 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100µA;IC=0 4 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1 .0 V VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA 1 .5 V ICBO Collector cut-off current VCB=200V; IE=0 10 µA IEBO Emitter cut-off current VEB=3V; IC=0 10 µA hF E DC current gain IC=50mA ; VCE=10V 30 240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1163 Fig.2 Outline dimensions 3