2SC1170

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION ·W ith TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PI N 1 2 3 Ba s e Em i t t e r Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 1200 500 6 3 .5 1 .0 50 150 -55~150 UNIT V V V A A W ? ? THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2 .5 UNIT ? /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M IN 2SC1170 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1 .2 V ICES Collector cut-off current VCE=1200V; VBE=0 1 .0 mA ICBO Collector cut-off current VCB=800V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 20 µA hFE-1 DC current gain IC=0.5A ; VCE=10V 10 hFE-2 DC current gain IC=3A ; VCE=10V 5 fT Transition frequency IC=0.5A ; VCE=10V 4 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1170 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3