2SC1212

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION ·W ith TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PI N 1 2 3 DESCRIPTION Em i t t e r Collector;connected to mounting base Ba s e Absolute maximum ratings(Ta=25? ) SYMBOL PARAMETER 2SC1212 VCBO Collector-base voltage 2SC1212A 2SC1212 VCEO Collector- emitter voltage 2SC1212A VEBO IC Emitter-base voltage Collector current Ta=25? PD Total power dissipation TC=25? Tj Tstg Junction temperature Storage temperature 8 150 -5 5 ~ + 1 5 0 ? ? Open collector Open base 80 4 1 0 .7 5 W V A Open emitter 80 50 V CONDITIONS VALUE 50 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER 2SC1212 V(BR)CEO Collector-emitter breakdown voltage 2SC1212A 2SC1212 V(BR)CBO Collector-base breakdown voltage 2SC1212A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VCE=4V VCB=50V; IE=0 IC=50mA ; VCE=4V IC=1A ; VCE=4V IC=30mA ; VCE=4V IC=1mA ;IE=0 IC=10mA ;RBE=8 CONDITIONS 2SC1212 2SC1212A M IN 50 TYP. MAX UNIT V 80 50 V 80 4 1 .5 1 .0 5 60 20 160 MHz 200 V V V µA u hFE-1 Classifications B 60-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1212 2SC1212A Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A 4