2SC1226A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION ·W ith TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PI N 1 2 3 Ba s e Collector Fig.1 simplified outline (TO-202) and symbol Em i t t e r DESCRIPTION Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER 2SC1226 VCBO Collector-base voltage 2SC1226A 2SC1226 VCEO Collector-emitter voltage 2SC1226A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25? Open collector Open base 40 5 2 3 0 .6 10 150 -55~150 V A A A W ? ? Open emitter 50 32 V CONDITIONS VALUE 40 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SC1226 V(BR)CBO Collector-base breakdown voltage 2SC1226A 2SC1226 V(BR)CEO Collector-emitter breakdown voltage 2SC1226A ICBO ICEO IEBO hF E COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=20V; IE=0 VCE=12V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0; VCB=5V;f=1MHz IE=0.5A ; VCB=5V IC=10mA; IB=0 IC=1mA;IE=0 CONDITIONS IC=2A ;IB=0.2 A IC=2A ;IB=0.2 A 2SC1226 2SC1226A M IN TYP. 0 .4 MAX 1 .0 1 .5 UNIT V V 40 V 50 32 V 40 1 100 100 50 50 150 220 pF MHz µA µA µA u hFE classifications P 50-100 Q 80-160 R 100-220 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1226 2SC1226A Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A 5