2SC1358

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1358 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1400 500 6 4.5 10 1.5 50 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Storage time IC=4A; IB1=-IB2=1.0A PW=20µs tf Fall time CONDITIONS IC=0.1A ; IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCE=1400V; VBE=0 VCB=1000V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=15V IC=3A ; VCE=15V 10 5 MIN 500 2SC1358 SYMBOL VCEO(SUS) VCEsat VBEsat ICES ICBO IEBO hFE-1 hFE-2 tstg TYP. MAX UNIT V 10 1.2 1.0 20 200 45 35 10 1.0 V V mA µA µA µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1358 Fig.2 Outline dimensions 3