2SC1440

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1440 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 15 4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IE=1mA ;IC=0 IC=10A; IB=1A IC=10A; IB=1A VCB=150V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V 20 10 MIN 150 5 2SC1440 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 2.5 0.1 0.1 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1440 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3