2SC1448

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1448 DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 150 150 5 1.5 0.5 1.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA; IB=0 IE=1mA; IC=0 IC=0.5A; IB=50m A VCB=150V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=10V IC=0.5A ; VCE=10V 40 5 MIN 150 5 2SC1448 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 20 20 140 V µA µA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1448 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3