2SC1450

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1450 DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V(min) ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=80 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 0.4 20 150 -65~200 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=0.5A; IB=50m A VCB=150V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 30 MIN 150 150 5 2SC1450 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE TYP. MAX UNIT V V V 1.5 10 10 150 V µA µA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1450 Fig.2 outline dimensions 3