2SC1516

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1516 ·Wit DESCRIPTION With TO-220 package ·Low collector saturation voltage APPLICATIONS ·For medium power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 35 35 5 1.5 3.0 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ,IB=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=35V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.2A ; VCE=10V 60 MIN 35 5 2SC1516 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 1.5 20 20 200 110 V V µA µA MHz hFE Classifications B 60-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1516 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3