2SC1586

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1586 DESCRIPTION ·With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 6 15 4 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A VCB=250V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V IE=0 ; VCB= 10V; f=1MHz 110 60 MIN 200 6 2SC1586 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V 2.0 0.1 0.1 V mA mA 10 MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1586 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3