2SC1626

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1626 DESCRIPTION ·With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -50~150 CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 750 2 1.5 W UNIT V V V mA A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 IC=0.1mA ; IE=0 IC=500mA; IB=50mA IC=500m A ; VCE=2V VCB=30V ;IE=0 VEB=5V; IC=0 IC=150m A ; VCE=2V IC=500m A ; VCE=2V IC=150m A ; VCE=2V IE=0;f=1MHz ; VCB=10V 70 40 50 MIN 80 80 2SC1626 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob TYP. MAX UNIT V V 0.5 1.0 0.5 1 240 V V µA µA MHz 13 pF hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1626 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3