2SC1723

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1723 DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency high voltage power amplifier ·TV power supply driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.2 15 150 -45~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=8 IC=100µA ; IE=0 IE=100µA ; IC=0 IC=100mA; IB=10mA IC=50m A ; VCE=10V VCB=250V ;IE=0 VCE=250V; RBE=8 IC=50m A ; VCE=10V IC=30m A ; VCE=20V IE=0 ; VCB=50V; f=1MHz 40 MIN 300 300 5 2SC1723 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO hFE fT COB TYP. MAX UNIT V V V 0.32 0.66 1.5 0.9 0.1 2 200 V V µA µA 60 6.2 MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1723 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3