SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1868
DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High voltage ,high speed APPLICATIONS ·For switching regulator application
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 7 7 80 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V 15 10 MIN 400 450 7
2SC1868
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V V V
1.0 1.5 100 100 50
V V µA µA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1868
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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