2SC1875

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 500 6 3.5 10 1.0 50 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Storage time IC=2.5A ; IB1=-IB2=0.6A Pw=20µs Fall time CONDITIONS IC=100mA ;IB=0 IC=2.5A; IB=0.6A IC=2.5A; IB=0.6A VCE=1500V; VBE=0 VCB=1000V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=10V IC=2A ; VCE=10V 10 5 MIN 500 2SC1875 SYMBOL VCEO(SUS) VCEsat VBEsat ICES ICBO IEBO hFE-1 hFE-2 ts tf TYP. MAX UNIT V 10 1.2 1.0 20 20 35 25 10 1.0 V V mA µA µA µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1875 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3