2SC1881

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1881 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 6 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Turn-on time Turn-off time CONDITIONS IC=50mA,RBE=< IE=50mA, IC=0 IC=2.5A ,IB=20mA VCB=60V, IE=0 VCE=30V, ,RBE=< IC=1.5A ; VCE=1.5V IC=2.5A ; VCE=1.5V 1000 500 MIN 60 7 2SC1881 SYMBOL VCEO(SUS) V(BR)EBO VCEsat ICBO ICEO hFE-1 hFE-2 ton toff TYP. MAX UNIT V V 1.2 0.2 0.4 V mA mA VCC=11V, IC=2A IB1=-IB2=8mA 1 5 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1881 Fig.2 Outline dimensions 3