2SC1894

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A ;IB=0 IE=1mA ;IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=750V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0; VCB=10V;f=1MHz 10 MIN 600 5 2SC1894 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V 5.0 1.5 50 50 40 3 155 V V µA µA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1894 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3