2SC2078

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2078 ·Wit DESCRIPTION With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 75 5 3 5 1.2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.1 A IC=1A; IB=0.1 A IC=0.1mA; IE=0 IC=1mA;RBE=150< IE=0.1mA; IC=0 VCB=40V;IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 25 45 80 75 5 MIN 2SC2078 SYMBOL VCEsat VBEsat V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE COB fT TYP. 0.15 0.9 MAX 0.6 1.2 UNIT V V V V V 10 10 200 µA µA pF MHz hFE Classifications B 25-50 C 40-80 D 60-120 E 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2078 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3