2SC2335F

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC2335F Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A ; IB1=0.6A,L=1mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VCE=400V ;VBE(off)=-1.5V TC=125 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1.0A ; VCE=5V IC=3.0A ; VCE=5V 20 20 10 MIN 400 SYMBOL V(SUS)CEO VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 2SC2335F TYP. MAX UNIT V 1.0 1.2 10 10 1.0 10 V V µA µA mA µA 80 Switching times ton tstg tf Turn-on time Storage time Fall time VCC=150V;IC=3.0A; IB1=-IB2=600mA; RL=50D 1.0 2.5 1.0 µs µs µs hFE-2 Classifications R 20-40 O 30-60 Y 40-80 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2335F Fig.2 outline dimensions 3