2SC2373

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 100 7 7.5 15 3.0 40 150 -55~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 3.125 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter voltage Emitter-base voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5A; IB=0.5 A IC=5A; IB=0.5 A IC=30mA; IB=0 IE=1.0mA; IC=0 VCB=150V;IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IC=0.1A ; VCE=5V;f=3.0MHz 15 5.0 100 7 MIN 2SC2373 SYMBOL VCEsat VBEsat VCEO VEBO ICBO IEBO hFE fT TYP. MAX 1.5 1.5 UNIT V V V V 10 10 70 µA µA MHz ton ts tf Turn-on time Storage time Fall time VCC=20V;IC=5.0A IB1=-IB2=0.6A PW=20µs 1.0 2.5 1.0 µs µs µs hFE classifications M 15-35 L 25-45 K 35-70 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2373 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2373 4