2SC2502

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High speed switching time APPLICATIONS ·For use in high-voltage,high-speed ,power switching in inductive circuit. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2502 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 6 12 2 50 150 -55~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ; IB=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCE=320V ;IB=0 VCB=500V ;IE=0 VEB=7V; IC=0 IC=3A ; VCE=2V IC=6A ; VCE=2V IC=0.6A ; VCE=10V;f=1MHz 15 8 10 MIN 400 2SC2502 SYMBOL VCEO(SUS) VCEsat VBEsat ICEO ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 0.7 1.5 100 100 1 V V µA µA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A IB1=-IB2=0.6A; RL=10C,VCC=30V 1.0 3.0 0.7 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2502 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3