2SC2553

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=4A APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2553 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 5 1 1.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=400V ;IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V 12 8 MIN 400 500 2SC2553 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V µA mA Switching times tr tstg tf Rise time Storage time Fall time VCC>200V; IC=4A IB1=-IB2=0.4A;RL=50@ Duty cycleB1% 1.0 2.5 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2553 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2553 4