2SC2590

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SC2590 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 0.5 1.0 1.2* 150 -55~150 UNIT V V V A A W Note) *: Without heat sink SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=100µA;IB=0 IE=10µA ;IC=0 IC=0.3A ;IB=30mA IC=0.3A ;IB=30mA IC=150mA ; VCE=10V IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCB=10V,f=200MHz 90 65 MIN 120 5 2SC2590 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE-1 hFE-2 COB fT TYP. MAX UNIT V V 1.0 1.2 220 100 20 200 V V pF MHz hFE-1 Classifications Q 90-155 R 130-220 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2590 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2590 4