2SC2608

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2608 DESCRIPTION ·With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 200 6 17 200 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=8A; IB=0.8A VCB=200V; IE=0 VEB=6V; IC=0 IC=8A ; VCE=4V IC=1A ; VCE=12V 20 MIN 200 200 6 2SC2608 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE fT TYP. MAX UNIT V V V 2.0 0.1 0.1 V mA mA 20 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2608 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3