2SC2681

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2681 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SA1141 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 115 115 5 10 15 100 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4.5A ;IB=0.45A IC=4.5A ; VCE=2V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=4.5A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=2V 60 40 MIN 2SC2681 SYMBOL VCEsat VBE ICBO IEBO hFE -1 hFE -2 COB fT TYP. 0.6 1.2 MAX 1.5 2.0 50 50 200 UNIT V V µA µA 230 80 pF MHz hFE-1 classifications R 60-120 Q 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2681 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3