2SC2833

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER 2SC2833 VCBO Collector-base voltage 2SC2833A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 70 150 -55~150 Open base Open collector Open emitter 900 500 8 5 10 3 2.5 W V V A A A CONDITIONS VALUE 800 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC2833 ICBO Collector cut-off current 2SC2833A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 2SC2833 2SC2833A SYMBOL VCEO(SUS) VCE(sat) VBE(sat) MIN 500 TYP. MAX UNIT V 1.0 1.5 V V 0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 3 0.1 mA mA MHz Switching times 2SC2833 ton Turn-on time 2SC2833A ts Storage time 2SC2833 tf Fall time 2SC2833A 1.2 IC=3.0A; VCC=200V IB1=0.6A ,IB2=-0.6A 1.2 3.0 1.0 µs µs 1.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2833 2SC2833A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3