2SC2908

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 Collector power dissipation Derate above 25 Junction temperature Storage temperature 0.4 150 -55~150 W/ CONDITIONS Open emitter Open base Open collector VALUE 200 100 12 5.0 10 2.5 50 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ;IB1=0.3A;L=1.0mH IC=3A ;IB=300mA IC=3A ;IB=300mA VCB=100V; IE=0 VCE=100V;VBE=-1.5V VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V 60 40 MIN 100 1.0 1.5 10 10 10 320 TYP. MAX UNIT V V V µA µA µA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; VCC=30V IB1=0.3A ,IB2=-0.3A RL=10@ 0.5 2.0 1.0 µs µs µs hFE-1 Classifications M 60-120 L 100-200 K 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2908 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 4