2SC2920

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC2920 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 450 400 7 15 150 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ; RBE=7 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=10A; IB=1A IC=10A; IB=1A VCB=450V ;IE=0 VEB=5V; IC=0 IC=10A ; VCE=2V IC=2A ; VCE=10V IE=0 ; VCB=10V,f=1MHz 10 MIN 400 450 7 2SC2920 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB TYP. MAX UNIT V V V 1.0 1.5 100 100 30 30 240 V V µA µA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2920 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3