2SC2981

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltatge ·High speed APPLICATIONS ·For high voltatge ,high speed and power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC2981 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 8 100 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=5mA ; RBE=7 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A VCB=750V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 800 900 7 2SC2981 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2981 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3