2SC3089

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 800V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/7A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 80 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 7 14 3 2.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=< IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.6A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.6A ; VCE=10V 15 8 MIN 500 800 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT 2SC3089 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V µA µA 80 18 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A ;IB1=-IB2=0.8A RL=50D,VCC=200V 1.0 3.0 1.0 µs µs µs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3089 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3089 4