2SC3150

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=900V(Min) ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/3A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3150 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=; IC=1mA ; IE=0 IE=1mA ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=10MHz ; VCB=10V 10 8 MIN 800 900 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB 2SC3150 TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V µA µA 15 60 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=400V; IC=2A IB1=0.4A;IB2=-0.8A; RL=200D 1.0 3.0 0.7 µs µs µs hFE-1 classifications K 10-20 L 15-30 M 20-40 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3150 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3150 4