SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3158
DESCRIPTION ·With TO-220F package ·High voltage ·High switching speed APPLICATIONS ·For switching regulator applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 14 3 1. 5 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SC3158
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
Collector-emitter breakdown voltage
IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V
400
V
Collector-base breakdown voltage
500
V
Emitter-base breakdown voltage
7
V
Collector-emitter saturation voltage
1.0
V
Base-emitter saturation voltage
1.2
V
Collector cut-off current
10
µA
Emitter cut-off current
10
µA
DC current gain
20
80
DC current gain
10
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3158
Fig.2 outline dimensions
3
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