2SC3223

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3223 DESCRIPTION ·With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 230 200 7 20 7 200 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.62 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A At rated voltage At rated voltage At rated voltage IC=20A ; VCE=2V IC=2A ; VCE=10V 10 MIN 200 2SC3223 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT TYP. MAX UNIT V 1.0 1.5 0.1 0.1 0.1 V V mA mA mA 20 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3223 Fig.2 Outline dimensions 3