2SC3264

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3264 DESCRIPTION ·With MT-200 package ·Complement to type 2SA1295 APPLICATIONS ·Audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 17 5 200 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=5A; IB=0.5A VCB=230V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-2A ; VCE=12V 50 MIN 230 2SC3264 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V 2.0 100 100 140 250 60 V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;RL=12@ IB1=- IB2=0.5A VCC=60V 0.30 2.40 0.50 µs µs µs hFE classifications O 50-100 Y 70-140 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3264 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3264 4