SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN package ·High speed switching ·Good linearity of hFE ·High VCBO APPLICATIONS ·For high speed switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC3285
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 1000 800 7 3 6 2 70 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ; IE=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=1000V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=0.2A ; VCE=5V 6 MIN 800
2SC3285
SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE fT
TYP.
MAX
UNIT V
1.5 1.5 50 50
V V µA µA
4
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=2A; IB1=0.4A;IB2=-0.8A VCC=250V 1.0 2.5 0.5 µs µs µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3285
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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