2SC3306

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ·Fast switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3306 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 15 5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=400V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 10 MIN 400 500 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE 2SC3306 TYP. MAX UNIT V V V 1.5 2.0 100 1.0 V V µA mA Switching times tr tstg tf Rise time Storage time Fall time VCC=200V; IC=5.0A IB1=-IB2=0.5A;RL=40 < 1.0 2.5 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3306 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3306 4