2SC3322

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION ·With TO-3P(I) package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 5 10 2.5 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,L=100mH;RBE=: IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=750V; IE=0 VCE=650V; RBE=: IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7 2SC3322 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 100 V V µA µA Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A ; VCC@250V IB1=0.6A; IB2=-1.5A 1.0 3.0 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3322 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3