2SC3387

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3387 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1200 500 6 5 10 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3387 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.3A ; VCE=5V 15 MIN 500 6 5.0 1.5 10 10 TYP. MAX UNIT V V V V µA µA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3387 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3