2SC3519A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3519 2SC3519A DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SC3519 VCBO Collector-base voltage 2SC3519A 2SC3519 VCEO Collector-emitter voltage 2SC3519A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 180 5 15 4 130 150 -55~150 V A A W Open emitter 180 160 V CONDITIONS VALUE 160 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SA1386 IC=25mA ;IB=0 2SA1386A IC=5A ;IB=0.5A VCB=160V; IE=0 CONDITIONS 2SC3519 2SC3519A SYMBOL MIN 160 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 2.0 V VCEsat Collector-emitter saturation voltage 2SA1386 2SA1386A ICBO Collector cut-off current 100 VCB=180V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 50 250 50 100 180 µA IEBO hFE Cob fT Emitter cut-off current DC current gain Output capacitance Transition frequency µA pF MHz Switching times ton ts tf Rise time Storage time Fall time IC=10A;RL=4B IB1=- IB2=1A VCC=40V 0.20 1.30 0.45 µs µs µs hFE Classifications O 50-100 P 70-140 Y 90-180 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3519 2SC3519A Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3519 2SC3519A 4