2SC3577

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3577 DESCRIPTION ·With TO-3PFa package ·High breakdown voltage ·High speed APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 850 650 7 5 10 3 80 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3577 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=800V; VBE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 10 6 6 MHz MIN 650 1.5 1.5 50 50 TYP. MAX UNIT V V V µA µA SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A; VCC=250V IB1=0.6A;IB2=-1.2A 1.0 2.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3577 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3