2SC3627

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3627 DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 10 15 2 2.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=5 A;IB=0.5 A IC=5 A;IB=0.5 A VCB=200V ;IE=0 VEB=7V ;IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 15 20 MIN 200 250 2SC3627 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V µA mA 80 Switching times tr ts tf Rise time Storage time Fall time VCC:150V,RL=25= IB1=-IB2=0.6 A 1.0 2.5 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3627 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3